Not all memories are the same and not only because of their different capacities. Since the leap from magnetic media, most electronic devices use what is commonly known as flash or solid-state memory for permanent data storage.
The principle they use to store the information inside is the same, but the way to implement and control the different storage cells has evolved over time and that is the reason why we now have much faster memories than just some years.
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As an example, just compare the memory speed of a high-end smartphone from 2018. The typical for the most powerful phones was to have a write speed of around 150 MBps. Today, the equivalent model of that phone is most likely capable of writing data to its main memory at a speed close to 1,200 MBps, eight times faster.
But even our current advanced memories are about to become obsolete once again. Samsung, which is the leading manufacturer of memory chips for smartphones, will have the first UFS (Universal Flash Storage) 4.0 memory chips ready in the third quarter of this year.
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This will be the new standard that we will see in most smartphones (there are some exceptions, such as Apple, which uses the NVMe standard in iPhones) and promises, above all, speed. It offers speeds of up to 23.2 Gbps per channel, double what UFS 3.1 has, which is the type of memory that we usually find today in most mid-range and high-end phones.
That amount of bandwidth is perfect for 5G phones that require large amounts of data processing, and is also expected to be adopted in future automotive, augmented reality, and virtual reality applications.
In practical terms, UFS 4.0 will allow you to reach sequential data read speeds of 4,200 MBps and write speeds of 2,800 MBps. Power efficiency will also improve by 46% over the current standard and the chips will be smaller in dimensions of about 11 x 13 x 1mm. and with capacities up to 1TB. As the memory is modular, chips can be combined to obtain higher capacities as well.
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